Method of forming drain extended mos transistors for high voltage circuits

ABSTRACT

A device including both drain extended metal-on-semiconductor (DE_MOS) and low-voltage metal-on-semiconductor (LV_MOS) transistors and methods of manufacturing the same are provided. In one embodiment, the method includes implanting ions of a first-type at a first energy level in a drain portion of a first DE_MOS transistor in a DE_MOS region of a substrate to form the first DE_MOS transistor, and implanting ions of the first-type at a second energy level in a LV_MOS region of the substrate adjust a voltage threshold of a first LV_MOS transistor, while concurrently implanting ions of the first-type at the second energy level in the drain portion of the first DE_MOS transistor to form a drain extension of the first DE_MOS transistor. Other embodiments are also provided.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/842,326 filed on Sep. 1, 2015, which is a continuation of U.S. patentapplication Ser. No. 14/108,967 filed on Dec. 17, 2013, now U.S. Pat.No. 9,123,642, issued Sep. 1, 2015, which claims priority under 35U.S.C. 119(e) to U.S. Provisional Patent Application Ser. No.61/857,151, filed Jul. 22, 2013, all of which are hereby incorporated byreference herein in their entirety.

TECHNICAL FIELD

This disclosure relates generally to fabrication of semiconductordevices, and more particularly to drain extended metal-on-semiconductor(DE_MOS) transistors used in high-voltage (HV) circuits of devices suchas Non-Volatile Memories (NVM) and methods for fabricating the same.

BACKGROUND

While many types of integrated circuits may be designed to operate witha single internal voltage, it is often desirable to provide anintegrated circuit (IC) including devices (e.g., transistors as well aspassive circuit elements) that operate at two or more different voltagelevels. Examples of such ICs include a Non-Volatile Memories (NVM) andan IC including a NVM or a flash macro, such as a micro-controller,microprocessor or programmable system on a chip (PSOC). Such a circuittypically includes low-voltage metal-on-semiconductor (LV_MOS)transistors used in logic and/or switching applications and designed tooperate at a voltage of less than from about 2.5 to about 3.3 volts (V),and other high-voltage metal-on-semiconductor (HV_MOS) transistors usedin NVM applications such as in input/output (I/O) cells or drivers, andtypically designed to operate at voltages of about 9V or greater.

A conventional approach to integrating a HV_MOS transistor into suchcircuit, illustrated in FIG. 1, includes introducing a thick gate oxidefor the HV_MOS transistor. Referring to FIG. 1, the circuit 100 includesa LV_MOS transistor 102 formed in a first region of a substrate 104 anda HV_MOS transistor 106 formed in a second region of the substrate.Typically, the first region of the substrate 104 is separated from thesecond region by an isolation structure, such as ashallow-trench-isolation (STI 108). Both the LV_MOS transistor 102 andthe HV_MOS transistor 106 include source (S) and drain (D) diffusionregions 110, separated by a channel 112, a gate 114 overlying thechannel, and a gate oxide (such as gate oxide 116 for the LV_MOStransistor and gate oxide 118 for the HV_MOS transistor), insulating thegate from the channel. The main difference between the LV_MOS transistor102 and the HV_MOS transistor 106, other than that a low voltage isapplied to the S/D diffusion regions 110 of the LV_MOS transistor whilea high voltage is applied to the S/D diffusion regions of the HV_MOStransistor, is that the gate oxide 118 for the HV_MOS transistor is muchthicker, typically 1.5 to 3 times thicker than the gate oxide 116 forthe LV_MOS transistor.

Another approach to integrating a HV_MOS transistor into such circuit,illustrated in FIG. 2 includes introducing a drain-extendedmetal-on-semiconductor (DE_MOS) transistor 200 having a reduced surfaceeffect (RESURF) architecture. Referring to FIG. 2, a RESURF-type DE_MOS200 typically includes in addition to a source diffusion region 202, achannel 204, a gate oxide 206, a gate 208 and a RESURF-type drainextension 210 formed in the substrate 212. The RESURF-type drainextension 210 is asymmetric with respect to the source diffusion region202 giving the RESURF-type DE_MOS 200 a larger drain region, and addinga STI 214 between a drain HV contact 216 and the channel 204. Inaddition, the RESURF-type drain extension 210 is typically more lightlydoped than the drain diffusion region 110 of a conventional HV_MOStransistor 106, such as that described above. Increasing the size of theRESURF-type drain extension 210, adding the STI 214 and the lightdoping, all serve to increase a device breakdown voltage of the DE_MOStransistor 200. Thus, the gate oxide 206 of the DE_MOS transistor 200,although often thicker than that of a LV_MOS formed elsewhere in thesame circuit, is typically not as thick as the HV_MOS transistor 106described above.

The above solutions, while an improvement over previous approaches tointegrating HV and LV devices in the same circuit are not whollysatisfactory for a number of reasons including the fact that theysignificantly increase the number of process steps and/or devicefootprint. In particular, both of the above approaches require a thickergate oxide, which it typically takes 3-5 additional mask layers tointroduce in to an existing MOS process flow. These additional masklayers significantly increase production costs and time while decreasinga yield of working circuits. Moreover, the introduction of theseadditional mask layers is not compatible with logic/mixed mode processtechnologies at foundries producing 130 nm technology nodes and below,which typically require a low thermal budget and limited number of wetprocessing steps. Finally, with regard to the RESURF-type DE_MOStransistor 200 it is noted the inclusion of the STI 214 within theRESURF-type drain extension 210 greatly increases the footprint of thedevice, making this approach unsuitable for applications in which theHV_MOS is part of circuit having tight critical dimension to space(CD/space) design rules, i.e., 0.47/1.2 μm or less, making it verydifficult to use these devices in pitched circuits such as an I/O cellsor drivers of a NVM.

SUMMARY

In light of the above, it would be desirable to manufacture integratedcircuits including drain extended metal-on-semiconductor (DE_MOS),high-voltage metal-on-semiconductor (HV_MOS) and low-voltagemetal-on-semiconductor (LV_MOS) transistors compatible with logic/mixedmode CMOS process technologies. It would also be desirable to arrive atsome way of forming DE_MOS and HV_MOS transistors that do not sufferfrom the drawbacks of the conventional approaches described above.

According to one embodiment of the present disclosure, the methodincludes implanting in a drain portion of a first DE_MOS transistor in aDE_MOS region of a substrate ions of a first-type at a first energylevel to form the first DE_MOS transistor, and implanting in a LV_MOSregion of the substrate ions of the first-type at a second energy leveladjust a voltage threshold of a first LV_MOS transistor, whileconcurrently implanting in the drain portion of the first DE_MOStransistor ions of the first-type at the second energy level to form adrain extension of the first DE_MOS transistor.

In another embodiment, the method further includes forming a mask overthe substrate exposing a part of the drain portion of the first DE_MOStransistor, and implanting ions of the first-type at a third energylevel to form a graduated drain extension of the first DE_MOStransistor.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is illustrated by way of example, and not by wayof limitation, in the figures of the accompanying drawings.

FIG. 1 (Prior Art) is a block diagram illustrating a sectional side viewof a circuit including both a low-voltage metal-on-semiconductor(LV_MOS) transistor and a conventional high-voltagemetal-on-semiconductor (HV_MOS) transistor including a thick gate oxide;

FIG. 2 (Prior Art) is a block diagram illustrating a sectional side viewof a conventional drain-extended metal-on-semiconductor (DE_MOS)transistor including a RESURF-type drain extension;

FIGS. 3A-C are block diagrams illustrating embodiments of a high-voltagedrain-extended metal-on-semiconductor (DE_MOS) transistor according tothe present disclosure;

FIG. 4 is a flowchart of an embodiment of a process or method formanufacturing an integrated circuit (IC) including DE_MOS transistoraccording to an embodiment of the present disclosure;

FIGS. 5A-G are block diagrams of a portion of an IC including a DE_MOStransistor illustrating a portion of the IC during a process flow formanufacturing the IC according to the method of FIG. 4;

FIG. 6 is a block diagram of a flash macro illustrating applications fora DE_MOS transistor according to embodiments of the present disclosure;

FIG. 7 is a block diagram of a portion of a NVM illustratingapplications for a DE_MOS transistor in both a memory array and a bitline driver according to embodiments of the present disclosure;

FIGS. 8A and 8B are plots illustrating a drain-to-source breakdownvoltage (BVDS) for DE_MOS transistors fabricated according to thepresent disclosure;

FIG. 8C is a plot of drain-to-source current versus drain-to-sourcevoltage (IDS-VDS) for a DE_NMOS transistor fabricated according to thepresent disclosure;

FIG. 9 is a schematic diagram of a driver including DE_MOS transistorsand illustrating the elimination of cascoding due to the high BVDS ofthe DE_MOS transistor fabricated according to the present disclosure;and

FIGS. 10A-D are block diagrams illustrating embodiments of DE_MOStransistors fabricated according to another embodiment of the presentdisclosure.

DETAILED DESCRIPTION

Various embodiments of the present invention will now be described withreference to a number of diagrams. The embodiments include methods ofconcurrently forming a high-voltage drain-extendedmetal-on-semiconductor (DE_MOS) transistor, as well as a low-voltagemetal-on-semiconductor (LV_MOS) and high-voltage metal-on-semiconductor(HV_MOS) transistors in a number of different circuits and applications.In particular embodiments, the DE_MOS transistor may be formed in thesame substrate as a LV_MOS transistor in an input/output (I/O) cell in anon-volatile memory (NVM), or in a driver for the NVM.

In the following description, for purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of the present invention. It will be evident, however, toone skilled in the art that the present invention may be practicedwithout these specific details. In other instances, well-knownstructures, and techniques are not shown in detail or are shown in blockdiagram form in order to avoid unnecessarily obscuring an understandingof this description.

Reference in the description to “one embodiment” or “an embodiment”means that a particular feature, structure, or characteristic describedin connection with the embodiment is included in at least one embodimentof the invention. The appearances of the phrase “in one embodiment” invarious places in the specification do not necessarily all refer to thesame embodiment. The term to couple as used herein may include both todirectly electrically connect two or more components or elements and toindirectly connect through one or more intervening components.

The terms “over,” “under,” “between,” and “on” as used herein refer to arelative position of one layer with respect to other layers. As such,for example, one layer deposited or disposed over or under another layermay be directly in contact with the other layer or may have one or moreintervening layers. Moreover, one layer deposited or disposed betweenlayers may be directly in contact with the layers or may have one ormore intervening layers. In contrast, a first layer “on” a second layeris in contact with that second layer. Additionally, the relativeposition of one layer with respect to other layers is provided assumingoperations deposit, modify and remove films relative to a startingsubstrate without consideration of the absolute orientation of thesubstrate.

Embodiments of a high-voltage drain-extended metal-on-semiconductor(DE_MOS) transistor according to the present disclosure will now bedescribed with reference to FIGS. 3A-C.

Referring to FIG. 3A in a first embodiment, the DE_MOS transistor 302 isa first or N-type DE_MOS transistor (DE_NMOS), formed in a P-well 304 ofa substrate 306, having a N+ doped source portion or source 308 and a N+doped drain 310 separated by a channel 312, and a gate 314 and a gatedielectric or gate oxide 316, overlying the channel. In accordance withthe present disclosure the DE_MOS transistor 302 further includes aN-drain extension 318 separating the channel 312 from the N+ doped drain310. Generally, the N-drain extension 318 comprises an implant or dopantconcentration that is lighter than that of the N+ doped drain 310. Insome embodiments, such as that shown, the N-drain extension 318 hasimplant or dopant concentration substantially equal to at least a sum ofa voltage threshold adjust implant (VTP) of a first low-voltagemetal-on-semiconductor (LV_MOS) transistor (not shown in this figure)formed concurrently elsewhere on the same substrate, and voltagethreshold adjust implant (VTPIO) of a non-drain extended, firsthigh-voltage metal-on-semiconductor (HV_MOS) (not shown in this figure)such as input/output (I/O) transistor, formed concurrently elsewhere onthe same substrate. It will be understood that the first LV_MOStransistor and first HV_MOS transistor are of the opposite type of theN-type DE_MOS or (DE_NMOS). That is the first LV_MOS transistor is aLV_PMOS and the first HV_MOS transistor a HV_PMOS.

In one very particular example, a suitable VTP implant may include lowenergy ions implanted at a dose in the range of 10¹² to 10¹⁴ ions/cm².Implant energies may be in the range of about 40-60 keV. A suitableVTPIO implant may include high energy ions implanted at a dose in therange of 10¹² to 10¹³ ions/cm², at implant energies in the range ofabout 60-150 keV. Implanted ions to form the N-drain extension 318 of aDE_MOS may include the Arsenic or Phosphorus species.

Referring to FIG. 3A it is noted that the gate oxide 316 includes anoxide layer having a thickness of from about 50 Å to about 65 Å, greaterthan that used in the LV_MOS transistor, but substantially less than thethickness used in conventional HV_MOS transistors. It is further notedthe N-drain extension 318 extends from the channel 312 a length ordistance of from about 0.5 um to about 0.9 um.

Finally, FIG. 3B illustrates a planar, top view of the DE_MOS transistorof FIG. 3A. Referring to FIGS. 3A and 3B it is noted that that theN-drain extension 318 does not include any shallow-trench-isolationstructure (STI) such as used in a conventional, reduced surface effect(RESURF) type a drain-extended metal-on-semiconductor (DE_MOS)transistor.

In a second embodiment shown in FIG. 3C the DE_MOS transistor 320 is asecond or P-type DE_MOS transistor (DE_PMOS), formed in a N-well 322 ofthe substrate 306, having a P+ doped source portion or source 324 and aP+ doped drain 326 separated by a channel 328, a gate 330 and a gatedielectric or oxide 332, overlying the channel. The P-type DE_MOStransistor (DE_PMOS) can be formed in the same substrate as the N-typeDE_MOS transistor 302 (DE_NMOS), as in the embodiment shown, or in aseparate substrate.

In accordance with the present disclosure the DE_MOS transistor 320further includes a P-drain extension 334 separating the channel 328 fromthe P+ doped drain 326. Generally, the P-drain extension 334 comprisesan implant or dopant concentration that is lighter than that of the P+doped drain 326. In some embodiments, such as that shown, the P-drainextension 334 has implant or dopant concentration substantially equal toat least a sum of a voltage threshold adjust implant (VTN) of a secondLV_MOS transistor (not shown in this figure) formed concurrentlyelsewhere on the same substrate, and voltage threshold adjust implant(VTNIO) of a non-drain extended, second HV_MOS transistor (not shown inthis figure) such as I/O transistor, formed concurrently elsewhere onthe same substrate. It will be understood that the second LV_MOStransistor and second HV_MOS transistor are of the opposite type of boththe P-type DE_MOS or (DE_PMOS) and the first LV_MOS transistor and firstHV_MOS transistor described above with respect to FIG. 3A.

In one very particular example, a suitable VTN implant may include lowenergy ions implanted at a dose in the range of 10¹² to 10¹⁴ ions/cm².Implant energies may be in the range of about 20-30 keV. A suitableVTNIO implant may include high energy ions may be implanted at a dose inthe range of 10¹² to 10¹³ ions/cm², at implant energies in the range ofabout 30-70 keV. Implanted ions to form the P-drain extension 334 of aDE_PMOS may include the BF₂ or Boron¹¹ species.

An embodiment of a process or method for manufacturing an IC includingan LV_MOS transistor, HV_MOS transistor and a DE_MOS transistoraccording to an embodiment of the present disclosure will now bedescribed in detail with reference to FIG. 4 and FIGS. 5A through 5G.

To simplify understanding of the method for manufacturing an ICincluding an LV_MOS transistor, HV_MOS transistor and an DE_MOStransistor, the surface of a substrate 502 is divided into threedifferent regions including a DE_MOS region 506 in which one or moreDE_MOS transistors will be formed, a LV_MOS region 508 in which one ormore LV_MOS transistors will be formed and a HV_MOS region 510 in whichone or more HV_MOS transistors will be formed. In the embodiment shown,each of the DE_MOS region 506, the LV_MOS region 508 and the HV_MOSregion 510 include one P-well and one N-well in which different types ofMOS transistors, either PMOS or NMOS will be formed.

Referring to FIG. 4 and FIG. 5A, the process begins with forming N-wellsand P-wells in a surface of the substrate 502, each of the N-wells andP-wells isolated from one another at substrate surface byshallow-trench-isolation structures 504 (step 402).

Referring to FIGS. 4 and 5B a first HV threshold voltage adjust mask 512is formed over the surface of the substrate to expose a N-well in theHV_MOS 510 region in which a first HV_MOS transistor (HV_PMOS 514) is tobe formed, and to expose a drain portion 516 in a P-well in the DE_MOSregion in which a first DE_MOS transistor (DE_NMOS 518) is to be formed(step 404). Next, referring to FIG. 4 a first HV threshold voltageadjust implant (VTPIO) is performed to implant ions of a first-type at afirst energy level in the N-well in the HV_MOS region to adjust avoltage threshold of the HV_PMOS 514, while concurrently implanting ionsof the first-type at the first energy level in the drain portion 516 ofthe DE_NMOS 518 (step 406). Optionally, as shown in FIG. 5B the maskingstep (step 404) and the first threshold voltage adjust implant step(step 406) further include exposing a source and channel portion 520 ina N-well in the DE_MOS region 506 in which a second DE_MOS transistor(DE_PMOS 522) is to be formed to form the source and channel portion ofthe DE_PMOS.

Referring to FIGS. 4 and 5C a second HV threshold voltage adjust mask524 is formed over the surface of the substrate to expose the P-well inthe HV_MOS 510 region in which a second HV_MOS transistor (HV NMOS 526)is to be formed, and to expose a drain portion 528 in the well in theDE_MOS region 506 in which the second DE_MOS transistor (DE_PMOS 522) isto be formed (step 408). Next, referring to FIG. 4 a second HV thresholdvoltage adjust implant (VTNIO) is performed to implant ions of asecond-type at the first energy level in the P-well in the HV_MOS regionto adjust a voltage threshold of the HV NMOS 526, while concurrentlyimplanting ions of the second-type at the first energy level in thedrain portion 528 of the DE_PMOS 522 (step 410). Optionally, as shown inFIG. 5C the masking step, step 408, and the second threshold voltageadjust implant step, step 410, further include exposing a source andchannel portion 530 in the P-well in the DE_MOS region 506 in which thefirst DE_MOS transistor (DE_NMOS 518) is to be formed to form the sourceand channel portion of the DE_NMOS.

Referring to FIGS. 4 and 5D, a first LV threshold voltage adjust mask532 is formed over the surface of the substrate 502 to expose a N-wellin the LV_MOS region 508 in which a first LV_MOS transistor (LV_PMOS534) is to be formed, and to expose a drain portion 516 in the P-well inthe DE_MOS region 506 in which the first DE_MOS transistor (DE_NMOS 518)is to be formed (step 412). Next, referring to FIG. 4 a first LVthreshold voltage adjust implant (VTP) is performed to implant ions ofthe first-type at a second energy level in the N-well in the LV_MOSregion 508 to adjust a voltage threshold of the LV_PMOS 534, whileconcurrently implanting additional ions of the first-type at the secondenergy level in the drain portion 516 of the DE_NMOS 518 (step 414).

Referring to FIGS. 4 and 5E, a second LV threshold voltage adjust mask536 is formed over the surface of the substrate to expose a P-well inthe LV_MOS region 508 in which a second LV_MOS transistor (LV NMOS 538)is to be formed, and to expose the drain portion 528 in the N-well inthe DE_MOS region 506 in which the first DE_MOS transistor (DE_PMOS 522)is to be formed (step 416). Next, referring to FIG. 4 a second LVthreshold voltage adjust implant (VTN) is performed to implant ions ofthe second-type at the second energy level in the P-well in the LV_MOSregion 508 to adjust a voltage threshold of the LV NMOS 538, whileconcurrently implanting additional ions of the second-type at the secondenergy level in the drain portion 528 of the DE_PMOS 522 (step 418).

Referring to FIG. 4 and FIGS. 5F and 5G, first and second gate oxides540, 542, and a gate layer 544 are deposited and patterned, and sources546 and drains 548 formed. Gate oxides 540, 542, can be deposited to anydesired thickness using standard oxide deposition techniques, includingin-situ-steam-generation (ISSG) and thermal oxidation. Referring to FIG.5F it is noted that the gate oxide 540 includes an oxide layer having athickness of from about 50 Å to about 65 Å, greater than the gate oxide542 used in the LV_MOS transistor, but substantially less than thethickness used in conventional HV_MOS transistors designed for operationat 9V or higher voltage.

Gate layer 544 generally includes poly-silicon, titanium nitride (TiN),tantalum nitride (TaN), tungsten (W), aluminum, copper or alloys ormixtures thereof, and is deposited by physical vapor deposition, such assputtering, evaporation, or electroless plating to a thickness of fromabout 500 to about 3000 Å. The gate layer 544 and gate oxides 540, 542are then patterned to form the gate stacks illustrated in FIG. 5G usingstandard photolithographic and metal and oxide etching techniques,including for example, a high density plasma (HDP) etching, and variouspost-metal etch cleaning processes to prevent corrosion defects.

The sources 546 and drains 548 can be formed by ion implantation tocomplete all DE_MOS, LV_MOS and HV_MOS transistors.

It will be understood by those skilled in the art that the embodiment ofa process or method of manufacturing or fabricating an IC includingDE_MOS, LV_MOS and HV_MOS transistors described above advantageouslyminimizes changes to the standard complimentarymetal-oxide-semiconductor (CMOS) process flow, including justmodifications of existing LV and HV threshold voltage adjust masks toform a DE_MOS transistor in a mixed mode circuit. By eliminating theneed for additional mask layers typically required with thicker oxidesproduction costs and time are significantly decreased while a yield ofworking circuits increased. It will further be understood that theDE_MOS transistor fabricated by the disclosed method minimizes thefootprint of the device, making this approach particular well suited forapplications in which the DE_MOS transistor is part of circuit havingtight critical dimension to space (CD/space) design rules, i.e.,0.47/1.2 um or less, making it very useful in pitched circuits such asan I/O cells or NVM array in a non-volatile macro circuit.

FIG. 6 is a block diagram of a flash macro 600 illustrating applicationsfor a DE_MOS transistors according to embodiments of the presentdisclosure. Referring to FIG. 6, it is noted that high voltage DE_MOStransistors can be used in at least three separate sub-circuits. Inparticular, it has been found that HV capabilities of the DE-MOStransistors can be advantageously used in HV sector select/CMUXs 602, inHV page latches 604 and in HV row drivers 606.

FIG. 7 is a layout of a portion of a NVM 700 illustrating applicationsfor a DE_MOS transistor 702 according to embodiments of the presentdisclosure in a bit line driver 704. The bit line driver 704 is laid outon-pitch with a memory array 706 including a plurality of cells 708.

FIGS. 8A and 8B are plots illustrating a drain-to-source breakdownvoltage (BVDS) distributions for DE_MOS transistors fabricated accordingto the present disclosure. FIG. 8A illustrates the BVDSS distribution802 for a DE_NMOS. Referring to FIG. 8A it is seen that the BVDSSdistribution 802 has been increased to be centered at 11.4V. Referringto FIG. 8B it is seen that BVDSS distribution 804 for a DE_PMOS has beenincreased to be centered at 9.9V.

FIG. 8C shows drain-to-source current versus drain-to-source voltage(IDS-VDS) for a DE_NMOS transistor fabricated according to the presentdisclosure with a BVDSS distribution centered at 11.4V. Referring toFIG. 8C it is seen that at VGS=VDS=3.3V, DE_NMOS delivers IDS of 530uA/um, typical for NMOS transistors. This high drive capability coupledwith the high BVDSS of 11.4V enable efficient use of the DE_NMOS devicesin HV driver circuits. The IDS-VDS for a DE_PMOS transistor fabricatedaccording to the present disclosure exhibit similar improvements.

FIG. 9 is a schematic diagrams of HV row driver circuit containingN-type MOS (NMOS) and P-type MOS (PMOS) drivers illustrating theelimination of cascoding due to the high BVDS of DE_MOS transistorfabricated according to the present disclosure.

Alternative Embodiments

Embodiments of a DE_MOS transistor including a graduated drain extensionand methods of forming the same according to the present disclosure willnow be described with reference to FIGS. 10A-10D.

In an alternative embodiment, the method further includes forming aDE_MOS transistor having a graduated drain extension to improve“on”-state resistance and/or safe operating area of the DE_MOStransistor.

Referring to FIG. 10A in a first embodiment the DE_MOS transistor 1002is a first or N-type DE_MOS transistor (DE_NMOS), formed in a P-well1004 of a substrate 1006, having a N+ doped source 1008 and a N+ dopeddrain 1010 separated by a channel 1012, a gate 1014 and a gatedielectric or oxide 1016, overlying the channel and a N-drain extension1018 separating the channel 1012 from the N+ doped drain 1010. Asdescribed above, the N-drain extension 1018 comprises an implant ordopant concentration substantially equal to at least a sum of athreshold voltage adjust implant (VTP) of a first low-voltagemetal-on-semiconductor (LV_MOS) transistor (not shown in this figure)formed concurrently elsewhere on the same substrate, and thresholdvoltage adjust implant (VTPIO) of a non-drain extended, firsthigh-voltage metal-on-semiconductor (HV_MOS) (not shown in this figure)such as input/output (I/O) transistor, formed concurrently elsewhere onthe same substrate.

In accordance with the present embodiment the DE_MOS transistor 1002further includes an additional implant 1020 in the N-drain extension1018. The addition of this additional implant 1020 to the drainextension to improve the “on” resistance and/or expand safe operatingarea (SOA) of the DE_MOS transistor.

Referring to FIG. 10B, the additional implant 1020 can be performed bydepositing and patterning a photoresist (PR) mask on the surface of thesubstrate 1006 to expose a portion of the N-drain extension 1018followed by implanting additional ions of the appropriate type, i.e.,N-type, at a suitable dose, and energy level. In one very particularexample, a suitable additional implant 1020 may include high energy ionsimplanted at a dose in the range of 10¹² to 10¹⁴ ions/cm². Implantenergies may be in the range of about 30-100 keV. Implanted ions to formthe additional implant 1020 of the DE_NMOS 1002 may include thePhosphorus or Arsenic species.

As indicated by horizontal arrows in FIG. 10B, the implant mask size orlocation can be selected to scale the size of the additional implant1020 depending on operation requirements of the DE_MOS transistor 1002.

In a second embodiment shown in FIG. 10C the DE_MOS transistor 1022 is asecond or P-type DE_MOS transistor (DE_PMOS), formed in a N-well 1024 ofthe substrate 1006, having a P+ doped source 1026 and a P+ doped drain1028 separated by a channel 1030, a gate 1032 and a gate dielectric oroxide 1034, overlying the channel.

In accordance with the present disclosure the DE_MOS transistor 1022further includes, in addition to a P-drain extension 1036 separating thechannel 1030 from the P+ doped drain 1028, an additional implant 1038 inthe P-drain extension 1036 to improve the “on” resistance and/or expandsafe operating area (SOA) of the DE_MOS transistor.

Referring to FIG. 10D, as with the DE_NMOS transistor 1002 theadditional implant 1038 can be performed by depositing and patterning aphotoresist (PR) mask on the surface the of substrate 1006 to expose aportion of the P-drain extension 1036 followed by implanting additionalions of the appropriate type, i.e., P-type, at a suitable dose, andenergy level. Generally, the additional implant 1038 of the P-drainextension 1036 generally includes an implant or dopant concentrationthat is lighter than that of the P+ doped drain 1028. In one veryparticular example, a suitable additional implant 1038 may include lowenergy ions implanted at a dose in the range of 10¹² to 10¹⁴ ions/cm².Implant energies may be in the range of about 20-50 keV. Implanted ionsto form the P-drain extension 1036 may include the BF₂ or Boron¹¹species.

Thus, embodiments of mixed mode integrated circuits and in particular ofnon-volatile memories including both DE_MOS and LV_MOS transistors andmethods of manufacturing the same have been described. Although thepresent disclosure has been described with reference to specificexemplary embodiments, it will be evident that various modifications andchanges may be made to these embodiments without departing from thebroader spirit and scope of the disclosure. Accordingly, thespecification and drawings are to be regarded in an illustrative ratherthan a restrictive sense.

The Abstract of the Disclosure is provided to comply with 37 C.F.R. §1.72(b), requiring an abstract that will allow the reader to quicklyascertain the nature of one or more embodiments of the technicaldisclosure. It is submitted with the understanding that it will not beused to interpret or limit the scope or meaning of the claims. Inaddition, in the foregoing Detailed Description, it can be seen thatvarious features are grouped together in a single embodiment for thepurpose of streamlining the disclosure. This method of disclosure is notto be interpreted as reflecting an intention that the claimedembodiments require more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed embodiment. Thus,the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment.

Reference in the description to one embodiment or an embodiment meansthat a particular feature, structure, or characteristic described inconnection with the embodiment is included in at least one embodiment ofthe circuit or method. The appearances of the phrase one embodiment invarious places in the specification do not necessarily all refer to thesame embodiment.

What is claimed is:
 1. A method comprising: implanting ions of afirst-type at a first energy level in a drain portion of a drainextended metal-on-semiconductor (DE_MOS) transistor in a DE_MOS regionof a substrate to form a first DE_MOS transistor; and implanting ions ofthe first-type at a second energy level in a low-voltagemetal-on-semiconductor (LV_MOS) region of the substrate to adjust avoltage threshold of a first LV_MOS transistor, while concurrentlyimplanting ions of the first-type at the second energy level in thedrain portion of the first DE_MOS transistor to form a drain extensionof the first DE_MOS transistor.
 2. The method of claim 1 whereinimplanting ions of the first-type at the first energy level in the drainportion of the first DE_MOS transistor, comprises concurrentlyimplanting ions of the first-type at the first energy level in ahigh-voltage metal-on-semiconductor (HV_MOS) region of the substrate toadjust a voltage threshold of a first high-voltagemetal-on-semiconductor (HV_MOS) transistor in the HV_MOS region.
 3. Themethod of claim 2 further comprising implanting ions of a second-type atthe first energy level in a drain portion of a second DE_MOS transistorin the DE_MOS region while concurrently implanting ions of thesecond-type at the first energy level in the HV_MOS region of thesubstrate to adjust a voltage threshold of a second HV_MOS transistor inthe HV_MOS region.
 4. The method of claim 3 further comprisingimplanting ions of the second-type at the second energy level in theLV_MOS region of the substrate to adjust a voltage threshold of a secondLV_MOS transistor, while concurrently implanting ions of the second-typeat the second energy level in the drain portion of the second DE_MOStransistor to form a drain extension of the second DE_MOS transistor. 5.The method of claim 4 wherein: implanting ions of the second-type at thefirst energy level in the HV_MOS region of the substrate to adjust avoltage threshold of the second HV_MOS transistor, further comprisesconcurrently implanting ions of the second-type at the first energylevel in the DE_MOS region to form a source portion of the first DE_MOStransistor; and implanting ions of the first-type at the first energylevel in the HV_MOS region of the substrate to adjust a voltagethreshold of the first HV_MOS transistor, further comprises concurrentlyimplanting ions of the first-type at the first energy level in theDE_MOS region to form a source portion of the second DE_MOS transistor.6. The method of claim 5 wherein the second energy level is lower thanthe first energy level.
 7. The method of claim 5 further comprisingforming sources and drains in the first DE_MOS transistor and the secondDE_MOS transistor, the first LV_MOS transistor and the second LV_MOStransistor, and the first HV_MOS transistor and the second HV_MOStransistor.
 8. The method of claim 1 wherein the DE_MOS formed is in aninput/output (I/O) cell of a non-volatile memory (NVM).
 9. The method ofclaim 1 wherein the DE_MOS formed is on pitch with a non-volatile memory(NVM) array of a NVM.
 10. The method of claim 1 further comprisingforming a mask over the substrate exposing a part of the drain portionof the first DE_MOS transistor, and implanting ions of the first-type ata third energy level to form a graduated drain extension of the firstDE_MOS transistor.
 11. A method comprising: forming a first thresholdvoltage adjust mask over a surface of a substrate to expose ahigh-voltage metal-on-semiconductor (HV_MOS) transistor in ahigh-voltage metal-on-semiconductor (HV_MOS) region of the substrate,and to expose a drain portion of a drain extended metal-on-semiconductor(DE_MOS) transistor in a DE_MOS region of the substrate; implanting ionsof a first-type at a first energy level in the drain portion of theDE_MOS transistor, while concurrently implanting ions of the first-typeat the first energy level in the HV_MOS transistor to adjust a voltagethreshold of the HV_MOS; forming a second threshold voltage adjust maskover the surface of a substrate to expose a low-voltagemetal-on-semiconductor (LV_MOS) transistor in a low-voltagemetal-on-semiconductor (LV_MOS) region of the substrate, and to exposethe drain portion of the DE_MOS transistor; and implanting ions of thefirst-type at a second energy level in the drain portion of the DE_MOStransistor, while concurrently implanting ions of the first-type at thesecond energy level in the LV_MOS transistor to adjust a voltagethreshold of the LV_MOS.
 12. The method of claim 11 wherein the secondenergy level is lower than the first energy level.
 13. The method ofclaim 11 further comprising forming sources and drains in the DE_MOStransistor the LV_MOS transistor, and HV_MOS transistor.
 14. The methodof claim 11 wherein the DE_MOS formed is in an input/output (I/O) cellof a non-volatile memory (NVM).
 15. The method of claim 11 wherein theDE_MOS formed is on pitch with a non-volatile memory (NVM) array of aNVM.
 16. The method of claim 11 further comprising forming a mask overthe substrate exposing a part of the drain portion of the DE_MOStransistor, and implanting ions of the first-type at a third energylevel to form a graduated drain extension of the DE_MOS transistor. 17.A method comprising: implanting ions of a first-type at a first energylevel in a drain portion of a drain extended metal-on-semiconductor(DE_MOS) transistor in a DE_MOS region of a substrate to form a DE_MOStransistor, while concurrently implanting ions of the first-type at thefirst energy level in a high-voltage metal-on-semiconductor (HV_MOS)region of the substrate to adjust a voltage threshold of a HV_MOStransistor in the HV_MOS region.
 18. The method of claim 17 furthercomprising implanting ions of the first-type at a second energy level ina low-voltage metal-on-semiconductor (LV_MOS) region of the substrate toadjust a voltage threshold of a LV_MOS transistor, while concurrentlyimplanting ions of the first-type at the second energy level in thedrain portion of the DE_MOS transistor to form a drain extension of theDE_MOS transistor.
 19. The method of claim 18 wherein the second energylevel is lower than the first energy level.
 20. The method of claim 18further comprising forming a first gate oxide for the DE_MOS transistorwhile concurrently forming a second gate oxide for the HV_MOStransistor.